Revision as of 19:36, 29 September 2015

Feedback to this page: click here

Purpose, location and technical specifications

The Raith Elphy system is a pattern generator built onto the LEO Scanning Electron Microscope (SEM) in cleanroom F-2. All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system.

Techical Specification

The system can be characterized as follows:

Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed).
The acceleration voltage is maximum 25 kV.
The maximum field-size without stitching is X µm x Y µm.
The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup.

Mounting of chips or wafers into chamber



Chip holder to Raith Elphy E-beam writer system; the holder has three clamps to hold up to 3 chips and a Faraday's cup to measure beam current.

@@ Line 15: / Line 15: @@
 = Mounting of chips or wafers into chamber =
+{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
+! width="400" |
+|- border="0"
+| [[File:IMG_0239.jpg|150px]] [[File:IMG_6675.jpg|400px]]
+|- align="center"
+| Chip holder to Raith Elphy E-beam writer system; the holder has three clamps to hold up to 3 chips and a Faraday's cup to measure beam current.
+|}