Specific Process Knowledge/Lithography/EBeamLithography/RaithElphyManual: Difference between revisions
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= Purpose, location and technical specifications = | = Purpose, location and technical specifications = | ||
The Raith Elphy system is a pattern generator built onto the [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Leo|LEO Scanning Electron Microscope ]] (SEM). All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system | The Raith Elphy system is a pattern generator built onto the [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Leo|LEO Scanning Electron Microscope ]] (SEM) in cleanroom F-2. All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system. | ||
== Techical Specification == | == Techical Specification == | ||
Revision as of 19:33, 29 September 2015
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Purpose, location and technical specifications
The Raith Elphy system is a pattern generator built onto the LEO Scanning Electron Microscope (SEM) in cleanroom F-2. All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system.
Techical Specification
The system can be characterized as follows:
- Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed).
- The acceleration voltage is maximum 25 kV.
- The maximum field-size without stitching is X µm x Y µm.
- The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup.