Specific Process Knowledge/Lithography/EBeamLithography/RaithElphyManual: Difference between revisions
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= Purpose, location and technical specifications = | = Purpose, location and technical specifications = | ||
The Raith Elphy system is a pattern generator built onto the [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Leo|LEO Scanning Electron Microscope ]] (SEM). All users must therefore acquire license to use the SEM LEO before acquiring license to | The Raith Elphy system is a pattern generator built onto the [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Leo|LEO Scanning Electron Microscope ]] (SEM). All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system. | ||
== Location == | == Location == | ||
The system is located in cleanroom F-2. | |||
== Techical Specification == | == Techical Specification == | ||
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The system can be characterized as follows: | The system can be characterized as follows: | ||
*The | *Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed). | ||
*The acceleration voltage is maximum 25 kV. | |||
*The maximum field-size without stitching is X µm x Y µm. | |||
*The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup. | |||
= Mounting of chips or wafers into chamber = | = Mounting of chips or wafers into chamber = | ||
Revision as of 19:32, 29 September 2015
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Purpose, location and technical specifications
The Raith Elphy system is a pattern generator built onto the LEO Scanning Electron Microscope (SEM). All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system.
Location
The system is located in cleanroom F-2.
Techical Specification
The system can be characterized as follows:
- Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed).
- The acceleration voltage is maximum 25 kV.
- The maximum field-size without stitching is X µm x Y µm.
- The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup.