Specific Process Knowledge/Characterization: Difference between revisions
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*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]] | *[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]] | ||
*[[/Four-Point_Probe|Four- | *[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] --> | ||
*[[Specific Process Knowledge/III-V Process/characterisation/III-V ECV-profiler|Carrier density (doping) profiler]] | *[[Specific Process Knowledge/III-V Process/characterisation/III-V ECV-profiler|Carrier density (doping) profiler]] | ||
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]] | *[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]] |
Revision as of 13:53, 29 September 2015
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
- Transmission Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
Optical microscopes
Optical characterization
SEM's at CEN
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S
SEM's at Danchip
TEM's at CEN
Various