Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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This furnace is the uppermost furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team. | This furnace is the uppermost furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team. | ||
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==A rough overview of the performance of the boron drive-in furnace and some process related parameters== | |||
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!style="background:silver; color:black;" align="left"|Purpose | |||
|style="background:LightGrey; color:black"|Drive-in of boron, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation: | |||
*Dry | |||
*Wet: with torch (H2+O2) | |||
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!style="background:silver; color:black" align="left"|Performance | |||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |||
*Dry SiO<sub>2: 10Å to ~2000Å (takes too long to make it thicker) | |||
*Wet SiO<sub>2SRN: 10Å to ~5µm ((takes too long to make it thicker) | |||
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!style="background:silver; color:black" align="left"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
|style="background:WhiteSmoke; color:black"| | |||
*800-1150 <sup>o</sup>C | |||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |||
*1 atm | |||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows | |||
|style="background:WhiteSmoke; color:black"| | |||
*H<math>_2</math>:? sccm | |||
*N<math>_2</math>:? sccm | |||
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!style="background:silver; color:black" align="left"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*1-25 4" wafer per run | |||
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|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon wafers (new from the box or RCA cleaned) | |||
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | |||
*Quartz wafers (RCA cleaned) | |||
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