Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

Revision as of 13:57, 26 February 2008

A1 Furnace Boron drive-in

A1 Boron drive in furnace:positioned in cleanroom 2

A1 Furnace boron drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing and for drive-in of boron after a pre-deposition of boron in the A2 Furnace boron pre-dep. It can also be used for drive in of boron which has been ion implanted.

This furnace is the uppermost furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

A rough overview of the performance of the boron drive-in furnace and some process related parameters

Purpose	Drive-in of boron, oxidation and annealing	Oxidation: Dry Wet: with torch (H2+O2)
Performance	Film thickness	Dry SiO_{2: 10Å to ~2000Å (takes too long to make it thicker)} Wet SiO_{2SRN: 10Å to ~5µm ((takes too long to make it thicker)}
Process parameter range	Process Temperature	800-1150 ^oC
.	Process pressure	1 atm
.	Gas flows	H $_{2}$ :? sccm N $_{2}$ :? sccm
Substrates	Batch size	1-25 4" wafer per run
.	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Quartz wafers (RCA cleaned)

@@ Line 5: / Line 5: @@
 This furnace is the uppermost furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
+<br clear="all" />
+==A rough overview of the performance of the boron drive-in furnace and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="10"
+|-
+!style="background:silver; color:black;" align="left"|Purpose
+|style="background:LightGrey; color:black"|Drive-in of boron, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
+*Dry
+*Wet: with torch (H2+O2)
+|-
+!style="background:silver; color:black" align="left"|Performance
+|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
+*Dry SiO<sub>2: 10Å  to ~2000Å (takes too long to make it thicker)
+*Wet SiO<sub>2SRN: 10Å to ~5µm ((takes too long to make it thicker)
+|-
+!style="background:silver; color:black" align="left"|Process parameter range
+|style="background:LightGrey; color:black"|Process Temperature
+|style="background:WhiteSmoke; color:black"|
+*800-1150 <sup>o</sup>C
+|-
+|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
+|style="background:WhiteSmoke; color:black"|
+*1 atm
+|-
+|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
+|style="background:WhiteSmoke; color:black"|
+*H<math>_2</math>:? sccm
+*N<math>_2</math>:? sccm
+|-
+!style="background:silver; color:black" align="left"|Substrates
+|style="background:LightGrey; color:black"|Batch size
+|style="background:WhiteSmoke; color:black"|
+*1-25 4" wafer per run
+|-
+|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
+|style="background:WhiteSmoke; color:black"|
+*Silicon wafers (new from the box or RCA cleaned)
+**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
+*Quartz wafers (RCA cleaned)
+|-
+|}