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Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions

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== Alignment and global mark detection ==
== Alignment and global mark detection ==
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#top|Go to top of this page]]</span>


Alignment of an e-beamed pattern to an existing pattern on wafer or chip (direct writing mode) requires at least two alignment marks, P and Q, preferably positioned in quadrant II and IV of the wafer or chip (the x-coordinate of the global mark Q must be equal to or larger than the x-coordinate of the global mark P).
Alignment of an e-beamed pattern to an existing pattern on wafer or chip (direct writing mode) requires at least two alignment marks, P and Q, preferably positioned in quadrant II and IV of the wafer or chip (the x-coordinate of the global mark Q must be equal to or larger than the x-coordinate of the global mark P).