Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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*[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] | *[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] | ||
*[[ | *[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al2O3 deposition using ALD]] | ||
==Comparison of the methods for deposition of Titanium Oxide== | ==Comparison of the methods for deposition of Titanium Oxide== |
Revision as of 11:04, 7 September 2015
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Deposition of aluminium oxide
Aluminium oxide (Alumina) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
Comparison of the methods for deposition of Titanium Oxide
Sputter technique using IBE/IBSD Ionfab300 | Sputter System Lesker | III-V Dielectric evaporator | ALD Picosun 200 | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on TiO2 |
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Substrate size |
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Allowed materials |
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