|
|
| Line 68: |
Line 68: |
| | style="background:WhiteSmoke; color:black" | Quite fast and easy | | | style="background:WhiteSmoke; color:black" | Quite fast and easy |
| |} | | |} |
|
| |
|
| |
|
| |
|
| |
| <gallery caption="The techniques EDX, SIMS and XPS" widths="240px" heights="240px" perrow="3">
| |
| image:EDX-scheme.jpg|The high energy electrons in the beam (denoted above as incident particle) collide with the core electrons of the sample atoms that are left in an excited state with higher energy. One decay mechanism is to let an outer electron fall into the unoccupied state under emission of a photon that carries the excess energy. This energy is determined by the electronic shells and hence characteristic of the atom.
| |
| image:SIMScascade.gif|A beam of high energy ions is rastered on the surface of the sample. Some of the atoms that used to make up the surface are sputtered off and emitted as secondary ions. The mass of the these ions is measured with a mass spectrometer.
| |
| image:Schematic XPS.JPG|The atoms in the sample is irradiated with X-rays and the energy of the incoming photons are adsorbed. Photoelectrons are ejected, and the energy of these electrons can be measured. Since the energy of the incoming photon is known, the binding energy of the electrons in the atom can be determined. The binding energy is characteristic for the element, and therefore the composition of the sample can be determined.
| |
| </gallery>
| |
|
| |
|
| == Secondary Ion Mass Spectrometry (SIMS) == | | == Secondary Ion Mass Spectrometry (SIMS) == |
