Jump to content

Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions

Pevo (talk | contribs)
No edit summary
Pevo (talk | contribs)
No edit summary
Line 6: Line 6:


For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).
For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).


====TiO<sub>2</sub> standard recipe====
====TiO<sub>2</sub> standard recipe====
Line 32: Line 33:
|-
|-
|}
|}


====TiO<sub>2</sub> deposition rates====
====TiO<sub>2</sub> deposition rates====
Line 44: Line 46:


Evgeniy Shkondin, DTU Danchip, April-May 2014.
Evgeniy Shkondin, DTU Danchip, April-May 2014.


====TiO<sub>2</sub> results====
====TiO<sub>2</sub> results====
Line 67: Line 70:


Evgeniy Shkondin, DTU Danchip, 2014.
Evgeniy Shkondin, DTU Danchip, 2014.


====TiO<sub>2</sub> deposition on trenches====
====TiO<sub>2</sub> deposition on trenches====