Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

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 === HEIMAP ===
 <span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>
+{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
+! width="200" |
+! width="200" |
+|- border="0"
+|[[File:HEIMAP1.png|400px]]
+|[[File:HEIMAP2.png|400px]] [[File:HEIMAP3.png|400px]]
+|
+|- align="center"
+|Results of HEIMAP can be found in the Map Analysis program (EBXMENU/Analysis/Map). In mask writing mode (i.e. without alignment), the system focusses the beam to the average height of all successfully measured points performed in HEIMAP. || HEIMAP measures the height of the substrate with two laser beams forming a x-shaped spot on the substrate. The spot size on the substrate has a width of 0.94 mm in X-direction. The laser beams have an incident angle of 17 degrees.
+|}
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-{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
-! width="200" |
-! width="200" |
-|- border="0"
-|[[File:HEIMAP1.png|400px]]
-|[[File:HEIMAP2.png|400px]] [[File:HEIMAP3.png|400px]]
-|
-|- align="center"
-|Results of HEIMAP can be found in the Map Analysis program (EBXMENU/Analysis/Map). In mask writing mode (i.e. without alignment), the system focusses the beam to the average height of all successfully measured points performed in HEIMAP. || HEIMAP measures the height of the substrate with two laser beams forming a x-shaped spot on the substrate. The spot size on the substrate has a width of 0.94 mm in X-direction. The laser beams have an incident angle of 17 degrees.
-|}
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