Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions
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=== SUBDEFBE === | === SUBDEFBE === | ||
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span> | <span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span> | ||
By using the (bottom) BE mark (specified in INITBE), the machine measures the gain and rotation of the subsidary (secondary) deflector (SUBsidary DEFlector using BE mark). | |||
The machines measures over a field specified in the subprogram but no larger than the main field size (4 µm x 4 µm). | |||
=== DRIFT === | === DRIFT === | ||