Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions
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== Rough estimation of exposure time == | == Rough estimation of exposure time == | ||
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Pattern writing using the e-beam writer is implemented on a wafer or chip which has been coated with an electron sensitive resist. Both positive and negative types of resists for pattern writing can be used. In either case, the resist sensitivity Q (C/cm2) is a function of the beam current, I (A), the pattern writing area, A (cm2), and the pattern writing time t (s), as given below: | Pattern writing using the e-beam writer is implemented on a wafer or chip which has been coated with an electron sensitive resist. Both positive and negative types of resists for pattern writing can be used. In either case, the resist sensitivity Q (C/cm2) is a function of the beam current, I (A), the pattern writing area, A (cm2), and the pattern writing time t (s), as given below: | ||
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The machine | {| cellpadding="2" style="border: 2px solid darkgray;" align="right" | ||
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| Beam diameter versus Beam current: The machine have three operating objective apertures (no. 15 on above illustration of the column) in order to obtain different beam diameters in different current ranges. The available apertures are called 'aperture 5' (60 µm), 'aperture 6' (100 µm) and 'aperture 7' (200 µm). | |||
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