Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
| Line 188: | Line 188: | ||
As is clear from the two images ARDE also plays a role in this case: The 2 µm trench (widened to about 5-6 µm because of undercut/underetching) is only etched 150 µm. | As is clear from the two images ARDE also plays a role in this case: The 2 µm trench (widened to about 5-6 µm because of undercut/underetching) is only etched 150 µm. | ||
===Iso=== | |||
The same recipe as Deepetch but without the passivation steps. <br> | |||
It has been tested once by Filip Sandborg-Olsen @nanotech. <br> | |||
He etched with 100% load for 10min. He got an etch rate of 5.51µm/min | |||
== Process development == | == Process development == | ||