Specific Process Knowledge/Characterization: Difference between revisions
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*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]] | *[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]] | ||
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | *[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | ||
*[[/X-Ray Diffractometer|X-Ray Diffractometer ]] | *[[/X-Ray Diffractometer|X-Ray Diffractometer ]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM FEI - ''This instrument has been relocated to CEN'']] | *[[/SEM: Scanning Electron Microscopy |SEM FEI - ''This instrument has been relocated to CEN'']] | ||
Revision as of 06:43, 21 August 2015
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S
- SEM LEO
- SEM JEOL
- SEM Zeiss
- SEM Zeiss Supra 60 VP