Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing/Acceptance test: Difference between revisions
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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | ||
The acceptance for the Multipurpose Anneal furnace was performed in November 2014 by ATV Technologie. | |||
Recipe: "vr_dryOx_1000C_120min_150_5Wafer_D1_mit_Inliner_oPurgering.ATV" | Recipe: "vr_dryOx_1000C_120min_150_5Wafer_D1_mit_Inliner_oPurgering.ATV" | ||
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | |||
|- | |||
! Mask | |||
! Resist etch rate [nm/min] | |||
! colspan="5" | Silicon etch rate [µm/min] | |||
! colspan="5" | Trench width [µm] | |||
! colspan="5" | Under etch [µm] | |||
! colspan="5" | Silicon etch angle [<sup>o</sup>C] | |||
|- | |||
! width="80" | | |||
! width="80" | | |||
! width="50" | 2 µm | |||
! width="50" | 4 µm | |||
! width="50" | 10 µm | |||
! width="50" | 50 µm | |||
! width="50" | 200 µm | |||
! width="50" | 2 µm | |||
! width="50" | 4 µm | |||
! width="50" | 10 µm | |||
! width="50" | 50 µm | |||
! width="50" | 200 µm | |||
! width="50" | 2 µm | |||
! width="50" | 4 µm | |||
! width="50" | 10 µm | |||
! width="50" | 50 µm | |||
! width="50" | 200 µm | |||
! width="50" | 2 µm | |||
! width="50" | 4 µm | |||
! width="50" | 10 µm | |||
! width="50" | 50 µm | |||
! width="50" | 200 µm | |||
|- | |||
! Travka5 | |||
| 67.31 | |||
| 0.6 | |||
| 0.63 | |||
| 0.63 | |||
| 0.62 | |||
| 0.61 | |||
| 2.60 | |||
| 4,91 | |||
| 10.96 | |||
| 51.00 | |||
| 201.90 | |||
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|- | |||
! Travka10 | |||
| 63.94 | |||
| 0.57 | |||
| 0.59 | |||
| 0.59 | |||
| 0.58 | |||
| 0.61 | |||
| 2.32 | |||
| 4.60 | |||
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|- | |||
! Travka20 | |||
| 63.13 | |||
| 0.63 | |||
| 0.63 | |||
| 0.64 | |||
| 0.64 | |||
| 0.59 | |||
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|- | |||
! Travka35 | |||
| 59.63 | |||
| 0.57 | |||
| 0.60 | |||
| 0.61 | |||
| 0.61 | |||
| 0.55 | |||
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|- | |||
! Travka50 | |||
| 57.13 | |||
| 0.47 | |||
| 0.5 | |||
| 0.51 | |||
| 0.51 | |||
| 0.49 | |||
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|- | |||
! Travka65 | |||
| 57.88 | |||
| 0.41 | |||
| 0.41 | |||
| 0.42 | |||
| 0.42 | |||
| 0.43 | |||
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|- | |||
! Travka80 | |||
| 57.56 | |||
| 0.37 | |||
| 0.36 | |||
| 0.37 | |||
| 0.37 | |||
| 0.38 | |||
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|- | |||
! Common | |||
| colspan="23" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers | |||
|} |
Revision as of 12:01, 11 August 2015
THIS PAGE IS UNDER CONSTRUCTION
The acceptance for the Multipurpose Anneal furnace was performed in November 2014 by ATV Technologie.
Recipe: "vr_dryOx_1000C_120min_150_5Wafer_D1_mit_Inliner_oPurgering.ATV"
Oxidation time: 80 min Oxidation temperature: 1050 oC O2 flow: 1 slm
The oxidation has been done with 150 mm wafer, and with 30 wafers in the furnace.
Wafer 4 (towards the door), wafer 16 and wafer 28 (towards the service area) were measured.
Mask | Resist etch rate [nm/min] | Silicon etch rate [µm/min] | Trench width [µm] | Under etch [µm] | Silicon etch angle [oC] | ||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2 µm | 4 µm | 10 µm | 50 µm | 200 µm | 2 µm | 4 µm | 10 µm | 50 µm | 200 µm | 2 µm | 4 µm | 10 µm | 50 µm | 200 µm | 2 µm | 4 µm | 10 µm | 50 µm | 200 µm | ||||
Travka5 | 67.31 | 0.6 | 0.63 | 0.63 | 0.62 | 0.61 | 2.60 | 4,91 | 10.96 | 51.00 | 201.90 | ||||||||||||
Travka10 | 63.94 | 0.57 | 0.59 | 0.59 | 0.58 | 0.61 | 2.32 | 4.60 | |||||||||||||||
Travka20 | 63.13 | 0.63 | 0.63 | 0.64 | 0.64 | 0.59 | |||||||||||||||||
Travka35 | 59.63 | 0.57 | 0.60 | 0.61 | 0.61 | 0.55 | |||||||||||||||||
Travka50 | 57.13 | 0.47 | 0.5 | 0.51 | 0.51 | 0.49 | |||||||||||||||||
Travka65 | 57.88 | 0.41 | 0.41 | 0.42 | 0.42 | 0.43 | |||||||||||||||||
Travka80 | 57.56 | 0.37 | 0.36 | 0.37 | 0.37 | 0.38 | |||||||||||||||||
Common | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers |