Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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 == Process Flow ==
-{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
-! width="200" |
-|- border="0"
-|[[File:5b_11.jpg|right|200px]]
-|- align="center"
-| Residues: After a dry etch, residues are very easily observed by SEM inspection. This particular trench was e-beam patterned at a too low dose. Residues are recommended removed by optimising dose and developing, not by plasma ashing, since our plasma ashers in the cleanroom are 'dirty' and most likely generate particles on the substrate.
-|}
-{|border="1" cellspacing="0" cellpadding="3" align="left" style="text-align:left;" style="width: 70%;"
+{|border="1" cellspacing="0" cellpadding="3" align="left" style="text-align:left;" style="width: 80%;"
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+{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
+! width="200" |
+|- border="0"
+|[[File:5b_11.jpg|right|200px]]
+|- align="center"
+| Residues: After a dry etch, residues are very easily observed by SEM inspection. This particular trench was e-beam patterned at a too low dose. Residues are recommended removed by optimising dose and developing, not by plasma ashing, since our plasma ashers in the cleanroom are 'dirty' and most likely generate particles on the substrate.
 |}