Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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 == Process Flow ==
+{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
+! width="200" |
+|- border="0"
+|[[File:5b_11.jpg|right|200px]]
+|- align="center"
+| Residues: After a dry etch, residues are very easily observed by SEM inspection. This particular trench was e-beam patterned at a too low dose. Residues are recommended removed by optimising dose and developing, not by plasma ashing, since our plasma ashers in the cleanroom are 'dirty' and most likely generate particles on the substrate.
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 |For dosepattern SEM inspection: the wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
 |-
-|}
-{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
-! width="200" |
-|- border="0"
-|[[File:5b_11.jpg|right|200px]]
-|- align="center"
-| Residues: After a dry etch, residues are very easily observed by SEM inspection. This particular trench was e-beam patterned at a too low dose. Residues are recommended removed by optimising dose and developing, not by plasma ashing, since our plasma ashers in the cleanroom are 'dirty' and most likely generate particles on the substrate.
 |}