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Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,329 edits
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!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
!
[[Specific_Process_Knowledge/Thermal_Process/C4_Al_Anneal_furnace| C4: Al Anneal Furnace]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
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!General description
!General description
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2.  
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2.  
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Annealing of wafers from EVG-NIL and PECVD3.
|Annealing of wafers with Al.
|Annealing of almost all materials on silicon wafers.
|Annealing of almost all materials on silicon wafers.
|Rapid thermal annealing
|Rapid thermal annealing
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
*Wet annealing with bobbler (water steam + N<sub>2</sub>)
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
|
*N<sub>2</sub>
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|
*N<sub>2</sub>
*N<sub>2</sub>
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*N<sub>2</sub>
*N<sub>2</sub>
*H<sub>2</sub>
*H<sub>2</sub>
*H<sub>2</sub>-N<sub>2</sub> gas mixture
*Vacuum is possible  
*Vacuum is possible  
|-
|-
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*700 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*Up to 500 <sup>o</sup>C
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
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*Ramp up to 300 C/min
*Ramp up to 300 C/min
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*Vacuum: *20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: *20 <sup>o</sup>C - 1100 <sup>o</sup>C
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C
|-
|-


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*Small samples on a carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 100 mm wafers
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
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*One 100 mm wafers on a carrier wafer
*One 100 mm wafers on a carrier wafer
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*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-30 50 mm, 100 mm or 150 mm wafers  
*1-50 200 mm wafers per run
*1-50 200 mm wafers
*Smaller samples (placed in a Si carrier wafer)
*Small samples on a carrier wafer, horizontal
|-
|-


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!'''Allowed materials'''
!'''Allowed materials'''
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*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD1.  
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD2.
|
*All processed wafers have to be RCA cleaned, except wafers from EVG-NIL and PECVD3.
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*All processed wafers have to be RCA cleaned, except wafers from EVG-NIL, PECVD3 and wafers for annealing of aluminum.
*Wafers with Al
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*Almost all materials, permission is needed.  
*Almost all materials, permission is needed.  
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