Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions
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XPS measurements shows that at temperaturs below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated with about 1-3 % chlorine molecules from the TiCl<sub>4</sub> precursor. This can be seen as small white dots in SEM images of the anatase TiO<sub>2</sub> layers. | XPS measurements shows that at temperaturs below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated with about 1-3 % chlorine molecules from the TiCl<sub>4</sub> precursor. This can be seen as small white dots in SEM images of the anatase TiO<sub>2</sub> layers. | ||
===TiO<sub>2</sub> standard recipe=== | ===TiO<sub>2</sub> standard recipe=== | ||
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===TiO<sub>2</sub> deposition rates=== | ===TiO<sub>2</sub> deposition rates=== | ||
In the graphs below the TiO<sub>2</sub> thickness as function of the number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C can be seen. From the equations the number of cycles required for a certain thickess can be calculated. | In the graphs below the TiO<sub>2</sub> thickness as function of the number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C can be seen. From the equations the number of cycles required for a certain thickess can be calculated. All result have been obtained for Si wafers with native oxide. | ||
<gallery caption="Titanium dioxide thickness as function of number of cycles" widths="300px" heights="300px" perrow="3"> | <gallery caption="Titanium dioxide thickness as function of number of cycles" widths="300px" heights="300px" perrow="3"> | ||
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image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C. | image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C. | ||
</gallery> | </gallery> | ||
===TiO<sub>2</sub> results=== | |||
Some some SEM images of TiO<sub>2</sub> deposited on a silicon surface at different temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C are shown below. Some of samples have been treated with HF (hydrofluoric acid) to remove the native oxide layer silicon samples just before the ALD deposition. | Some some SEM images of TiO<sub>2</sub> deposited on a silicon surface at different temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C are shown below. Some of samples have been treated with HF (hydrofluoric acid) to remove the native oxide layer silicon samples just before the ALD deposition. | ||