Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions
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Some some SEM images of TiO<sub>2</sub> deposited on a silicon surface at different temperatures between 150 <sup>o</sup>C and | Some some SEM images of TiO<sub>2</sub> deposited on a silicon surface at different temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C are shown below. Some of samples have been treated with HF (hydrofluoric acid) to remove the native oxide layer silicon samples just before the ALD deposition. | ||
<gallery caption="Titanium dioxide thickness as function of number of cycles" widths=" | <gallery caption="Titanium dioxide thickness as function of number of cycles" widths="250px" heights="250px" perrow="3"> | ||
image:TiO2 150C 1200 cycles Si_HF_treated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles, HF treated. | image:TiO2 150C 1200 cycles Si_HF_treated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles, HF treated. | ||
image:TiO2 150C 1200 cycles Si_untreated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles. | image:TiO2 150C 1200 cycles Si_untreated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles. | ||
image:TiO2 250C 750cycles_Si_untreated.jpg| Temperature 250 <sup>o</sup>C, 750 cycles. | image:TiO2 250C 750cycles_Si_untreated.jpg| Temperature 250 <sup>o</sup>C, 750 cycles. | ||
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image:TiO2 1000 cycles 300C Si_HF.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles, HF treated. | image:TiO2 1000 cycles 300C Si_HF.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles, HF treated. | ||
image:TiO2 1000 cycles 300C Si_un.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles. | image:TiO2 1000 cycles 300C Si_un.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles. | ||
image:TiO2 350C 1250 cycles Si_HF_treated.jpg| Temperature 350 <sup>o</sup>C, 1250 cycles, HF treated. | image:TiO2 350C 1250 cycles Si_HF_treated.jpg| Temperature 350 <sup>o</sup>C, 1250 cycles, HF treated. | ||
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Below some SEM images of anatase TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well. | Below some SEM images of anatase TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well. | ||