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Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

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''' Direct writing mode (with alignment) '''
''' Direct writing mode (with alignment) '''
When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer and/or virtual chip mark detection is obtained, the result of HEIMAP is discarded and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette.
When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer and/or virtual chip mark detection is obtained, the result of HEIMAP is '''discarded''' and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette.




HEIMAP measures the height of the substrate with a laser beam, the beam spot size onto the substrate is 0.94 mm x 0.08 mm. It is important to measure height at substrate positions where the beam is not deflected from holes or mesas.
It is important to measure height at substrate positions where the beam is not deflected from holes, mesas, or wafer holders.




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|- border="0"
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|[[File:DRIFT.png|400px]]
|[[File:HEIMAP1.png|400px]]
|[[File:drift.png|500px]]
|[[File:HEIMAP2.png|400px]]
|[[file:DRIFT mark.png|450px]]
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|In the DRIFT subprogram window, you can either use the <br> '''1''' BE mark: click 'acquisition of Bottom BE mark' or <br> '''2''' use your own global mark: tick 'rough scan not available' and enter the stage position of your global mark || DRIFT measurements (by PATH DRF5M) during a 7 hour long exposure. The machine will positionally correct for the displacement it observes during exposure, i.e. the maximum pattern displacement is the drift between every measurement point (5 min). || According to this table (provided by JEOL) a global mark (P) can be used as a DRIFT mark in automatic or semi-automatic alignment mode if CHIPAL 0, V1, V4 or S is used. A chip mark can be used as a DRIFT mark in any case where CHIPAL is defined to CHIPAL 1 or CHIPAL 4.
|Results of HEIMAP can be found in the Map Analysis program (EBX MENU/Analysis/Map). In mask writing mode (i.e. without alignment), the system focusses the beam to the average height of all 25 measurement points performed in HEIMAP. || HEIMAP measures the height of the substrate with two laser beams forming a x-shaped spot on the substrate. The spot size on the substrate has a width of 0.94 mm in X-direction. The laser beams have an incident angle of 17 degrees.


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#Save the settings by clicking 'Save', and execute the program.
#When the program has been executed, the result of the test will appear in the result-display area of the calibration window. The measured height in the 25 points should not deviate more than +/- 50 mu.
# (Execute SETWFR and CHIPAL - If you are aligning in semi-automatical mode, see section 7)
#Save the condition file by clicking 'Save/Edit Parameter...'. Click 'Acquisition of latest status' to the right and (after the parameters appear in the window) click 'Apply/Save'. Note in the status line that the condition file has been saved.


= Exposure of mgn-files =
= Exposure of mgn-files =