Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions
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''' Direct writing mode (with alignment) ''' | ''' Direct writing mode (with alignment) ''' | ||
When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer and/or virtual chip mark detection is obtained, the result of HEIMAP is discarded and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette. | When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer and/or virtual chip mark detection is obtained, the result of HEIMAP is '''discarded''' and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette. | ||
It is important to measure height at substrate positions where the beam is not deflected from holes, mesas, or wafer holders. | |||
{| cellpadding="2" style="border: 2px solid darkgray;" align="right" | {| cellpadding="2" style="border: 2px solid darkgray;" align="right" | ||
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|[[File: | |[[File:HEIMAP1.png|400px]] | ||
|[[File: | |[[File:HEIMAP2.png|400px]] | ||
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|- align="center" | |- align="center" | ||
| | |Results of HEIMAP can be found in the Map Analysis program (EBX MENU/Analysis/Map). In mask writing mode (i.e. without alignment), the system focusses the beam to the average height of all 25 measurement points performed in HEIMAP. || HEIMAP measures the height of the substrate with two laser beams forming a x-shaped spot on the substrate. The spot size on the substrate has a width of 0.94 mm in X-direction. The laser beams have an incident angle of 17 degrees. | ||
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= Exposure of mgn-files = | = Exposure of mgn-files = | ||