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Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

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|[[File:drift.png|500px|right]]
|[[File:DRIFT.png|400px]]
|[[file:DRIFT mark.png|450px|right]]
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| DRIFT measurements (by PATH DRF5M) during a 7 hour long exposure. The machine will positionally correct for the displacement it observes during exposure, i.e. the maximum pattern displacement is the drift between every measurement point (5 min).  || According to this table (provided by JEOL) a global mark (P) can be used as a DRIFT mark in automatic or semi-automatic alignment mode if CHIPAL 0, V1, V4 or S is used. A chip mark can be used as a DRIFT mark in any case where CHIPAL is defined to CHIPAL 1 or CHIPAL 4.
| || DRIFT measurements (by PATH DRF5M) during a 7 hour long exposure. The machine will positionally correct for the displacement it observes during exposure, i.e. the maximum pattern displacement is the drift between every measurement point (5 min).  || According to this table (provided by JEOL) a global mark (P) can be used as a DRIFT mark in automatic or semi-automatic alignment mode if CHIPAL 0, V1, V4 or S is used. A chip mark can be used as a DRIFT mark in any case where CHIPAL is defined to CHIPAL 1 or CHIPAL 4.


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