Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | [[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | ||
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==Life time of the photoresist in BHF== | ==Life time of the photoresist in BHF== | ||
Photoresist delaminates from the substrate in BHF. For standard photoresist this takes about or less than ½ hour but the time can vary with resist pattern. The life time can be prolonged a little to ½ hour - 40 minutes if the photoresist is baked at 120<sup>o</sup>C | Photoresist delaminates from the substrate in BHF. For standard photoresist this takes about or less than ½ hour but the time can vary with resist pattern. The life time can be prolonged a little to ½ hour - 40 minutes if the photoresist is baked at 120<sup>o</sup>C | ||