Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
No edit summary |
|||
| Line 111: | Line 111: | ||
|} | |} | ||
[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | [[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | ||
==Life time of the photoresist in BHF== | |||
Photoresist delaminates from the substrate in BHF. For standard photoresist this takes about or less than ½ hour but the time can vary with resist pattern. The life time can be prolonged a little to ½ hour - 40 minutes if the photoresist is baked at 120<sup>o</sup>C | |||