Specific Process Knowledge/Lithography/EBeamLithography/BEAMER: Difference between revisions
Appearance
| Line 56: | Line 56: | ||
The multipass method smooths the pattern writing over many fields, each field writing the pattern with e.g. half the dose in different areas of the main deflector; this is however not recommended for field sizes larger than 500 mm x 500 mm, as the distorion of the main deflector using larger field sizes may be larger than the stitching errors of two fields. | The multipass method smooths the pattern writing over many fields, each field writing the pattern with e.g. half the dose in different areas of the main deflector; this is however not recommended for field sizes larger than 500 mm x 500 mm, as the distorion of the main deflector using larger field sizes may be larger than the stitching errors of two fields. | ||
[[File:beamer12.jpg|400px]] | |||
<br clear="all" /> | <br clear="all" /> | ||