Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions
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! Dose-modulated pattern aligned to global marks on a 4" wafer | ! Dose-modulated pattern aligned to global marks and chip marks on a 4" wafer | ||
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!colspan="2"| A 3*3 array of chips, each 1 mm*1 mm in size, is written on a 4” wafer. The pattern is aligned to global marks and every chip i aligned to chip marks. The top left chip of the array (of patterns) is centered at (X,Y) = (-35000,35000). All chips are written with pattern ‘mettekjan2012.v30’. A dose modulation of 48 levels is applied to each chip. Before exposure, the calibration-path ‘HEI’ is applied. | !colspan="2"| A 3*3 array of chips, each 1 mm*1 mm in size, is written on a 4” wafer. The pattern is aligned to global marks and every chip i aligned to chip marks. The top left chip of the array (of patterns) is centered at (X,Y) = (-35000,35000). All chips are written with pattern ‘mettekjan2012.v30’. A dose modulation of 48 levels is applied to each chip. Before exposure, the calibration-path ‘HEI’ is applied. | ||