Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions

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 ! Dose-modulated pattern aligned to global marks on a 4" wafer
 |-
-!colspan="2"| A 3*3 array of chips, each 1 mm*1 mm in size, is written on a 4” wafer, but only within a 3.8" diameter. The top left chip of the array (of patterns) is centered at (X,Y) = (-5000,35000). All chips are of pattern #1 detailed in the ‘mettekjan2012.v30’-file. A dose modulation of 48 levels is applied to each chip. Before exposure, the calibration-path ‘HEI’ is applied.
+!colspan="2"| A 3*3 array of chips, each 1 mm*1 mm in size, is written on a 4” wafer. The pattern is aligned to global marks and every chip i aligned to chip marks. The top left chip of the array (of patterns) is centered at (X,Y) = (-35000,35000). All chips are written with pattern ‘mettekjan2012.v30’. A dose modulation of 48 levels is applied to each chip. Before exposure, the calibration-path ‘HEI’ is applied.
 |-
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 CALPRM '0.2na_ap5'
 GLMDET S
-CHIPAL 0
+CHIPAL 4
 DEFMODE 2
 OFFSET(0,0)
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 <pre>
-JOB/W    'BERIT',4,3.8
+JOB/W    'BERIT',4
 PATH   HEI
   ARRAY       (-35000,3,1000)/(35000,3,1000)
+  CHMPOS M1=(-3500,3500),M2=(3500,3500),M3=(3500,-3500),M4=(-3500,-3500)
+  CHMARK 4.0,15.0
    ASSIGN P(1)->((*,*),SHOT1)
   AEND