Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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 [[Image:BHF_RR3.jpg|300x300px|thumb|Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3]]
-Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabil etch rate and has a high selectivty of oxide compared to photoresist which makes photoresist a good masking material for the oxide etch. However etching down to a silicon surface BHF leaves the siliocn surface slightly more rough than a pure HF solution.
+Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabile etch rate and more gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch.
-SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the SIO etch.
+SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the SIO etch. It is also a good idea to wet the sample in water before etching.