Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

Revision as of 09:27, 21 February 2008 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits →Silicon oxide etch data ← Older edit		Revision as of 09:28, 21 February 2008 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits →Wet Silicon Oxide Etch (BHF and SIO Etch (wetting agent)) Newer edit →
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	Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabil etch rate and has a high selectivty of oxide compared to photoresist which makes photoresist a good masking material for the oxide etch. However etching down to a silicon surface BHF leaves the siliocn surface slightly more rough than a pure HF solution.		Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabil etch rate and has a high selectivty of oxide compared to photoresist which makes photoresist a good masking material for the oxide etch. However etching down to a silicon surface BHF leaves the siliocn surface slightly more rough than a pure HF solution.

	SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes ~~(~<?)~~		SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes.