Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions
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<gallery caption="Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px"> | <gallery caption="Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px"> | ||
Revision as of 09:36, 27 May 2015
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- Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer
30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
*Rotation speed 0 rpm
*Angle: -35
*I(N)=400mA
*RF power=1300W
*I(B)=300mA
*V(B)=300V
*V(AC,B)=500V
*Ar(N) flow=5sccm
*Ar(B) flow=5sccm
*CHF3 flow=15sccm
45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
*Rotation speed 0 rpm
*Angle: -35
*I(N)=400mA
*RF power=1300W
*I(B)=300mA
*V(B)=300V
*V(AC,B)=500V
*Ar(N) flow=5sccm
*Ar(B) flow=5sccm
*CHF3 flow=15sccm
20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
*Rotation speed 0 rpm
*Angle: -35
*I(N)=550mA
*RF power=1300W
*I(B)=500mA
*V(B)=600V
*V(AC,B)=400V
*Ar(N) flow=5sccm
*Ar(B) flow=10sccm
*CHF3 flow=0sccm
15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
*Rotation speed 0 rpm
*Angle: -35
*I(N)=400mA
*RF power=1300W
*I(B)=300mA
*V(B)=300V
*V(AC,B)=500V
*Ar(N) flow=5sccm
*Ar(B) flow=5sccm
*CHF3 flow=15sccm
