Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
Line 7: Line 7:
Image:IBE 30min -Cr1.jpg |'''30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:IBE 30min -Cr1.jpg |'''30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings'''
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=550mA<br>*RF power=1300W<br>*I(B)=500mA<br>*V(B)=600V<br>*V(AC,B)=400V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=10sccm<br>*CHF3 flow=0sccm
Image:15min+30min5.jpg|'''15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:15min+30min5.jpg|'''15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm


</gallery>
</gallery>

Revision as of 09:36, 27 May 2015

Feedback to this page: click here

THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

  • Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer

  • 30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm

  • 45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm

  • 20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=550mA
    *RF power=1300W
    *I(B)=500mA
    *V(B)=600V
    *V(AC,B)=400V
    *Ar(N) flow=5sccm
    *Ar(B) flow=10sccm
    *CHF3 flow=0sccm

  • 15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_blazed_gratings&oldid=18922"