Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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<br>In order to achieve thicker coatings of AZ 5214E while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed, with backside rinse the first half of the time. Soft baking is done at 100°C for 90s in 1mm proximity. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask. | |||
''Flow names, process parameters, and test results:'' | |||
*'''(3440) DCH 100mm 5214E 4.2um''' | |||
*'''(3441) DCH 100mm 5214E 4.2um HMDS''' | |||
*'''(3640) DCH 150mm 5214E 4.2um''' | |||
*'''(3641) DCH 150mm 5214E 4.2um HMDS''' | |||
Waiting: 60s @ 600 rpm. Spin-off: 10s @ 3500 rpm. | |||
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!Substrate | |||
!Thickness | |||
!Uniformity (+/-) | |||
!Test date | |||
!Tester initials | |||
!Comments | |||
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|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|4.171 µm | |||
|0.7% | |||
|20/3 2015 | |||
|taran | |||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|4.194 µm | |||
|0.5% | |||
|20/3 2015 | |||
|taran | |||
|6" wafer, no HMDS. 13 points on one wafer, exclusion zone 5mm | |||
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==AZ 4562 coating== | |||
Spin coating of standard thicknesses (1.5 - 3 µm) of AZ nLOF 2020 on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 2000 rpm/s before stopping. Soft baking is done at 90°C for 60s. | |||
''Flow names, process parameters, and test results:'' | |||
*'''(4460) DCH 100mm 4562 6.2um''' | |||
*'''(4461) DCH 100mm 4562 6.2um HMDS''' | |||
*'''(4660) DCH 150mm 4562 6.2um''' | |||
*'''(4661) DCH 150mm 4562 6.2um HMDS''' | |||
Spin-off: 4500 rpm. | |||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" | |||
|- | |||
|-style="background:silver; color:black" | |||
!Substrate | |||
!Thickness | |||
!Uniformity (+/-) | |||
!Test date | |||
!Tester initials | |||
!Comments | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|1.507 µm | |||
|1.0% | |||
|20/3 2015 | |||
|taran | |||
|SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm. | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|1.500 µm | |||
|0.6% | |||
|20/3 2015 | |||
|taran | |||
|SAT results. 4" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm. | |||
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