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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,526 edits
Line 276: Line 276:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|2.041 µm
|2.018 µm
|0.4%
|0.5%
|27/3 2015
|16/3 2015
|taran
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|SAT results. 4" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|2.032 µm
|0.8%
|16/3 2015
|taran
|SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
|}
|}


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