Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

@@ Line 335: / Line 335: @@
 |-style="background:WhiteSmoke; color:black"
 |Silicon with native oxide
-|1.559
+|1.???
 |0.4%
 |27/3 2015
@@ Line 347: / Line 347: @@
 *'''(3620) DCH 150mm 5214E 2.2um'''
 *'''(3621) DCH 150mm 5214E 2.2um HMDS'''
-Spin-off: ???? rpm.
+Spin-off: 2100 rpm.
 {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"
@@ Line 363: / Line 363: @@
 |-style="background:WhiteSmoke; color:black"
 |Silicon with native oxide
-|2.041 µm
+|2.201 µm
-|0.4%
+|0.5%
-|27/3 2015
+|20/3 2015
 |taran
 |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
@@ Line 393: / Line 393: @@
 |-style="background:WhiteSmoke; color:black"
 |Silicon with native oxide
-|4.076 µm
+|4.194 µm
+|0.5%
+|20/3 2015
+|taran
+|6" wafer, no HMDS. 13 points on one wafer, exclusion zone 5mm
+|-
+|-style="background:WhiteSmoke; color:black"
+|Silicon with native oxide
+|4.171 µm
 |0.7%
-|27/3 2015
+|20/3 2015
 |taran
 |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
 |}