Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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| Line 143: | Line 143: | ||
''Flow names, process parameters, and test results:'' | ''Flow names, process parameters, and test results:'' | ||
*'''( | *'''(1410) DCH 100mm MiR 701 1.5um''' | ||
*'''( | *'''(1411) DCH 100mm MiR 701 1.5um HMDS''' | ||
*'''( | *'''(1610) DCH 150mm MiR 701 1.5um''' | ||
*'''( | *'''(1611) DCH 150mm MiR 701 1.5um HMDS''' | ||
Spin-off: 4600 rpm. | Spin-off: 4600 rpm. | ||
| Line 169: | Line 169: | ||
*'''( | *'''(1420) DCH 100mm MiR 701 2um''' | ||
*'''( | *'''(1421) DCH 100mm MiR 701 2um HMDS''' | ||
*'''( | *'''(1620) DCH 150mm MiR 701 2um''' | ||
*'''( | *'''(1621) DCH 150mm MiR 701 2um HMDS''' | ||
Spin-off: 2600 rpm. | Spin-off: 2600 rpm. | ||
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|2.019 µm | |2.019 µm | ||
|1.5% | |1.5% | ||
|26/3 2015 | |||
|taran | |||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|} | |||
Spin coating of standard thicknesses (1.3 - 2.5 µm) of AZ MiR 701 (29cps) on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 1000 rpm/s before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity. | |||
''Flow names, process parameters, and test results:'' | |||
*'''(1440) DCH 100mm MiR 701 4um''' | |||
*'''(1441) DCH 100mm MiR 701 4um HMDS''' | |||
*'''(1640) DCH 150mm MiR 701 4um''' | |||
*'''(1641) DCH 150mm MiR 701 4um HMDS''' | |||
Waiting: 75s @ 600 rpm. Spin-off: 10s @ 3000 rpm. | |||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" | |||
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|-style="background:silver; color:black" | |||
!Substrate | |||
!Thickness | |||
!Uniformity (+/-) | |||
!Test date | |||
!Tester initials | |||
!Comments | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|3.992 µm | |||
|0.7% | |||
|26/3 2015 | |26/3 2015 | ||
|taran | |taran | ||