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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
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''Flow names, process parameters, and test results:''
''Flow names, process parameters, and test results:''
*'''(1001) DCH 100mm MiR 701 1.5um'''
*'''(1410) DCH 100mm MiR 701 1.5um'''
*'''(1002) DCH 100mm MiR 701 1.5um HMDS'''
*'''(1411) DCH 100mm MiR 701 1.5um HMDS'''
*'''(1101) DCH 150mm MiR 701 1.5um'''
*'''(1610) DCH 150mm MiR 701 1.5um'''
*'''(1102) DCH 150mm MiR 701 1.5um HMDS'''
*'''(1611) DCH 150mm MiR 701 1.5um HMDS'''
Spin-off: 4600 rpm.
Spin-off: 4600 rpm.


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*'''(1011) DCH 100mm MiR 701 2um'''
*'''(1420) DCH 100mm MiR 701 2um'''
*'''(1012) DCH 100mm MiR 701 2um HMDS'''
*'''(1421) DCH 100mm MiR 701 2um HMDS'''
*'''(1111) DCH 150mm MiR 701 2um'''
*'''(1620) DCH 150mm MiR 701 2um'''
*'''(1112) DCH 150mm MiR 701 2um HMDS'''
*'''(1621) DCH 150mm MiR 701 2um HMDS'''
Spin-off: 2600 rpm.
Spin-off: 2600 rpm.


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|2.019 µm
|2.019 µm
|1.5%
|1.5%
|26/3 2015
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|}
Spin coating of standard thicknesses (1.3 - 2.5 µm) of AZ MiR 701 (29cps) on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 1000 rpm/s before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.
''Flow names, process parameters, and test results:''
*'''(1440) DCH 100mm MiR 701 4um'''
*'''(1441) DCH 100mm MiR 701 4um HMDS'''
*'''(1640) DCH 150mm MiR 701 4um'''
*'''(1641) DCH 150mm MiR 701 4um HMDS'''
Waiting: 75s @ 600 rpm. Spin-off: 10s @ 3000 rpm.
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!Substrate
!Thickness
!Uniformity (+/-)
!Test date
!Tester initials
!Comments
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|3.992 µm
|0.7%
|26/3 2015
|26/3 2015
|taran
|taran