Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions
| Line 5: | Line 5: | ||
<gallery caption="Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px"> | <gallery caption="Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px"> | ||
Image:IBE 30min -Cr1.jpg |30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 | Image:IBE 30min -Cr1.jpg |30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA | ||
Image:after IBE 45min_A_34.jpg |45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 | Image:after IBE 45min_A_34.jpg |45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 | ||
Image:Edge_1.jpg|20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings | Image:Edge_1.jpg|20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings | ||
Revision as of 08:31, 27 May 2015
Feedback to this page: click here
THIS PAGE IS UNDER CONSTRUCTION
- Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer
-
30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
*Rotation speed 0 rpm
*Angle: -35
*I(N)=400mA
*RF power=1300W
*I(B)=300mA -
45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 -
20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings -
15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
