Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

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<gallery caption="Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px">
<gallery caption="Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px">


Image:IBE 30min -Cr1.jpg |30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
Image:IBE 30min -Cr1.jpg |30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA
Image:after IBE 45min_A_34.jpg |45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3  
Image:after IBE 45min_A_34.jpg |45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3  
Image:Edge_1.jpg|20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
Image:Edge_1.jpg|20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings

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  • Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer
  • 30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA
    30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
  • 45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
  • 20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
    20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
  • 15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
    15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
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