Specific Process Knowledge/Characterization/Sample preparation: Difference between revisions

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 ![[image:SEM_SliceCrossection_1.jpg|300x300px|thumb|left|
-  Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The edges are nicely defined, though corrugated on the 100 nm scale.
+  Cross section of a silicon wafer with a multitude of deep reactive ion etched cavities. The shape of these cavities is of interest.
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 ![[image:SEM_SliceCrossection_2.jpg|300x300px|thumb|left|
-  Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. Residues of the SiO2 etching are apperent on top of the SiO2, i.e. particles a few nanometers in diameter. Most probably it is sputtered and redopsited Silicon Dioxide, but not confirmed. Attempts to remove them in 7-Up or HCl failed.
+  Close up. The feature has a cylindric-parabolic shape and steep sidewalls. The target is to measure the parabolic shape along the depth of the features.
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 ![[image:StackedSlices.jpg|300x300px|thumb|left|
-  Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The edges are nicely defined, though corrugated on the 100 nm scale.
+  Photograph of a multitude of silicon slices stacked and fixed with a purpose made clamp made of Aluminum. The c
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 ![[image:StackedSlicesWithFrame.jpg|300x300px|thumb|left|
-  Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. Residues of the SiO2 etching are apperent on top of the SiO2, i.e. particles a few nanometers in diameter. Most probably it is sputtered and redopsited Silicon Dioxide, but not confirmed. Attempts to remove them in 7-Up or HCl failed.
+  In order to be able to fill the
 ]]
 ![[image:WaferWithCast_2.jpg|300x300px|thumb|left|