Specific Process Knowledge/Characterization/Sample preparation: Difference between revisions
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:Etch Load (Total Exposed SiO2): ~ 10 %<br> | :Etch Load (Total Exposed SiO2): ~ 10 %<br> | ||
:Post process: O2 Plasma Ashing 10 min | :Post process: O2 Plasma Ashing 10 min | ||
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![[image:SEM_SliceCrossection_1.jpg|300x300px|thumb|left| | |||
Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The edges are nicely defined, though corrugated on the 100 nm scale. | |||
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![[image:SEM_SliceCrossection_2.jpg|300x300px|thumb|left| | |||
Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. Residues of the SiO2 etching are apperent on top of the SiO2, i.e. particles a few nanometers in diameter. Most probably it is sputtered and redopsited Silicon Dioxide, but not confirmed. Attempts to remove them in 7-Up or HCl failed. | |||
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![[image:StackedSlices.jpg|300x300px|thumb|left| | ![[image:StackedSlices.jpg|300x300px|thumb|left| | ||
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![[image:SEM_PDMS_1.jpg|300x300px|thumb|left| | ![[image:SEM_PDMS_1.jpg|300x300px|thumb|left| | ||