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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes (~<?)
SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes (~<?)
===Silicon oxide etch data===
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! BHF
! 5% HF
! SIO
|-
|'''General description'''
|
Etching of silicon oxide with a stabil etch rate
|
Mainly for removing native oxide
|-
|'''Chemical solution'''
|BHF??
|5% HF
|BHF with wetting agent
|-
|'''Process temperature'''
|Room temperature
|Room temperature
|Room temperature
|-
|'''Possible masking materials'''
|
*Photoresist
*Silicon nitride
*PolySi
*Blue film
|
*Photoresist (in beaker)
*Silicon nitride (in beaker)
*PolySi (in beaker)
*Blue film (in beaker)
|
*Photoresist
*Silicon nitride
*PolySi
*Blue film
|-
|'''Etch rate'''
|Wet thermal oxide:~80nm/min
PECVD1 (standard):
|
*~26 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>)
*~? Å/min (Thermal oxide)
|
|-
|'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>'''
|~21
|<21
|-
|'''Batch size'''
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|'''Size of substrate'''
|
2-6" wafers
|
2-6" wafers
|-
|'''Allowed materials'''
|
*Silicon
*Silicon nitrides
*Silicon oxides
|
*Silicon
*Silicon nitrides
*Silicon oxides
|-
|}
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