Specific Process Knowledge/Characterization: Difference between revisions
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*[[/SEM FEI Nova 600 NanoSEM|SEM FEI Nova 600 NanoSEM]] | *[[/SEM FEI Nova 600 NanoSEM|SEM FEI Nova 600 NanoSEM]] | ||
*[[/SEM FEI Quanta 200 ESEM FEG|SEM FEI Quanta 200 ESEM FEG]] | *[[/SEM FEI Quanta 200 ESEM FEG|SEM FEI Quanta 200 ESEM FEG]] | ||
*[[/SEM Inspect S|SEM Inspect S]] | |||
*[[/SEM: Scanning Electron Microscopy |SEM LEO]] | *[[/SEM: Scanning Electron Microscopy |SEM LEO]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM JEOL]] | *[[/SEM: Scanning Electron Microscopy |SEM JEOL]] | ||
Revision as of 13:25, 19 August 2015
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S
- SEM LEO
- SEM JEOL
- SEM Zeiss
- SEM Zeiss Supra 60 VP