Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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[[File:FieldToField.png|700px]] | [[File:FieldToField.png|700px]] | ||
== | == Overlay accuracy (layer to layer stitching) == | ||
In this experiment, a set of Vernier marks (L1) were exposed along with global marks and chip marks in appr 170 nm CSAR. This layer was developed, metalized and lift-off performed with 4 second ultrasonic. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer. A second set of Vernier marks (L2) was aligned to the two gloabl marks and 4 chip marks and exposed. Layer 2 was developed, metalized and lift-off performed with 4 second ultrasonic. The final pattern SEM inspected in Zeiss Supra 60VP. | In this experiment, a set of Vernier marks (L1) were exposed along with global marks and chip marks in appr 170 nm CSAR. This layer was developed, metalized and lift-off performed with 4 second ultrasonic. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer. A second set of Vernier marks (L2) was aligned to the two gloabl marks and 4 chip marks and exposed. Layer 2 was developed, metalized and lift-off performed with 4 second ultrasonic. The final pattern SEM inspected in Zeiss Supra 60VP. | ||
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|-style="background:Black; color:White" | |||
!colspan="5"|wafer 9.19 Contrast Curve, Processed by TIGRE, Dec-Jan 2014-2015 | |||
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|-style="background:WhiteSmoke; color:black" | |||
!Resist | |||
!E-beam exposure | |||
!Development | |||
!Metallisation | |||
!Lift-off | |||
!Characterisation | |||
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|-style="background:WhiteSmoke; color:black" | |||
|CSAR AR-P6200 AllResist, 400 rpm, 60s, softbaked 60s @ 150degC | |||
|JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L1: 1st set of Vernier scales, 6 global marks and 4 chip marks in every chip | |||
|AR-600-546, 60 s | |||
|5 nm Ti, 45 nm Au, Wordentec (D-2) | |||
|AR-600-71, 5-10 min, 4s ultrasonic (D-3) | |||
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|-style="background:WhiteSmoke; color:black" | |||
|CSAR AR-P6200 AllResist, 400 rpm, 60s, softbaked 60s @ 150degC | |||
|JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L2: 2nd set of Vernier scales aligned to 2 global marks and 4 chip marks in every chip (scan width 10 µm) | |||
|AR-600-546, 60 s | |||
|5 nm Ti, 45 nm Au, Wordentec (D-2) | |||
|AR-600-71, 5-10 min, 4s ultrasonic (D-3) | |||
|Zeiss Supra 60VP, 10kV, Inlens detector | |||
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[[File:LayerToLayer1.png|700px]] | [[File:LayerToLayer1.png|700px]] | ||