Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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 == Layer to layer stitching ==
-In this experiment, global marks and chip marks were exposoed along with first set of vernier marks in layer 1 exposed in appr 170 nm CSAR. This layer was developed, metalized and lift-off performed with 4 second ultrasonic. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer and layer 2 aligned to the two gloabl marks and 4 chip marks. Layer 2 was developed, metalized and lift-off performed with 4 second ultrasonic. The final pattern SEM inspected in Zeiss Supra 60VP.
+In this experiment, a set of vernier marks (L1) were exposed along with global marks and chip marks in appr 170 nm CSAR. This layer was developed, metalized and lift-off performed with 4 second ultrasonic. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer. A second set of vernier marks (L2) was aligned to the two gloabl marks and 4 chip marks and exposed. Layer 2 was developed, metalized and lift-off performed with 4 second ultrasonic. The final pattern SEM inspected in Zeiss Supra 60VP.
 [[File:LayerToLayer1.png|700px]]