Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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In this experiment, global marks and chip marks were exposoed along with first set of vernier marks in layer 1 exposed in appr 170 nm CSAR. This layer was developed, metalized and lift-off performed with 4 second ultrasonic. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer and layer 2 aligned to the two gloabl marks and 4 chip marks. Layer 2 was developed, metalized and lift-off performed with 4 second ultrasonic. The final pattern SEM inspected in Zeiss Supra 60VP. | In this experiment, global marks and chip marks were exposoed along with first set of vernier marks in layer 1 exposed in appr 170 nm CSAR. This layer was developed, metalized and lift-off performed with 4 second ultrasonic. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer and layer 2 aligned to the two gloabl marks and 4 chip marks. Layer 2 was developed, metalized and lift-off performed with 4 second ultrasonic. The final pattern SEM inspected in Zeiss Supra 60VP. | ||
[[File:LayerToLayer1.png|700px]][[File:LayerToLayer2.png|700px]] | [[File:LayerToLayer1.png|700px]] | ||
[[File:LayerToLayer2.png|700px]] | |||