Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions
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! | !2014-07-22 | ||
| | |157.3% (wafer center) | ||
| | | | ||
| | | | ||
|- | |- | ||
|- | |- | ||
! | !2015-09-08 | ||
| | |132 % | ||
|B2 | |B2 | ||
|B3 | |B3 | ||
Revision as of 14:01, 8 September 2015
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| Material parameters for using the crystal monitors | |||||
| Material | Density | Z ratio | |||
|---|---|---|---|---|---|
| TiO2 | 4.260 | 0.400 | |||
| SiO2 | 2.648 | 1.000 | |||
| Si | 2.320 | 0.712 | |||
| Settings for Crystal thickness monitor 1 | |||||
| Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
|---|---|---|---|---|---|
| 2014-07-22 | 157.3% (wafer center) | ||||
| 2015-09-08 | 132 % | B2 | B3 | ||
| C | C1 | C2 | C3 | ||
| D | D1 | D2 | D3 | ||
| Settings for Crystal thickness monitor 2 | |||||
| Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
|---|---|---|---|---|---|
| A | A1 | A2 | A3 | ||
| B | B1 | B2 | B3 | ||
| C | C1 | C2 | C3 | ||
| D | D1 | D2 | D3 | ||