Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions
No edit summary |
No edit summary |
||
Line 47: | Line 47: | ||
|- | |- | ||
! | !2014-07-22 | ||
| | |157.3% (wafer center) | ||
| | | | ||
| | | | ||
|- | |- | ||
|- | |- | ||
! | !2015-09-08 | ||
| | |132 % | ||
|B2 | |B2 | ||
|B3 | |B3 |
Revision as of 14:01, 8 September 2015
Feedback to this page: click here
Material parameters for using the crystal monitors | |||||
Material | Density | Z ratio | |||
---|---|---|---|---|---|
TiO2 | 4.260 | 0.400 | |||
SiO2 | 2.648 | 1.000 | |||
Si | 2.320 | 0.712 |
Settings for Crystal thickness monitor 1 | |||||
Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
---|---|---|---|---|---|
2014-07-22 | 157.3% (wafer center) | ||||
2015-09-08 | 132 % | B2 | B3 | ||
C | C1 | C2 | C3 | ||
D | D1 | D2 | D3 |
Settings for Crystal thickness monitor 2 | |||||
Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
---|---|---|---|---|---|
A | A1 | A2 | A3 | ||
B | B1 | B2 | B3 | ||
C | C1 | C2 | C3 | ||
D | D1 | D2 | D3 |