Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
No edit summary
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
No edit summary
Line 6: Line 6:
|-style="background:Black; color:White"
|-style="background:Black; color:White"


|colspan="6" style="text-align: center;" | '''Material parameters for calculating the tooling factor'''
|colspan="6" style="text-align: center;" | '''Material parameters for using the crystal monitors'''


|-
|-

Revision as of 10:01, 20 April 2015

Feedback to this page: click here

How to calculate the tooling factor. Taken from the manufacture manual
Material parameters for using the crystal monitors
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for Crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings&oldid=18442"