Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions
No edit summary |
No edit summary |
||
Line 4: | Line 4: | ||
{| border="1" style="text-align: center;" | {| border="1" style="text-align: center;" | ||
|- | |-style="background:Black; color:White" | ||
|colspan="6" style="text-align: center;" | |colspan="6" style="text-align: center;" | '''Material parameters for calculating the tooling factor''' | ||
|- | |- |
Revision as of 10:00, 20 April 2015
Feedback to this page: click here
Material parameters for calculating the tooling factor | |||||
Material | Density | Z ratio | |||
---|---|---|---|---|---|
TiO2 | 4.260 | 0.400 | |||
SiO2 | 2.648 | 1.000 | |||
Si | 2.320 | 0.712 |
Settings for Crystal thickness monitor 1 | |||||
Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
---|---|---|---|---|---|
22-7-2014 | 1.573 (wafer center) | ||||
B | B1 | B2 | B3 | ||
C | C1 | C2 | C3 | ||
D | D1 | D2 | D3 |
Settings for Crystal thickness monitor 2 | |||||
Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
---|---|---|---|---|---|
A | A1 | A2 | A3 | ||
B | B1 | B2 | B3 | ||
C | C1 | C2 | C3 | ||
D | D1 | D2 | D3 |