Specific Process Knowledge/Wafer cleaning: Difference between revisions

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*[[/RCA|RCA]] - ''Two step process to remove organics and metals''
*[[/RCA|RCA]] - ''Two step process to remove organics and metals''
*[[/7-up|7-up]] - ''Fake piranha etch of wafers and masks - removes organics and alkali ions''
*[[/7-up & Piranha|7-up & Piranha]] - ''Removes organics and alkali ions''
*[[/Piranha|Piranha]] - ''Removes organics and alkali ions''
*[[/cleaning with HF|5% HF]] - ''Removing native oxide''
*[[/cleaning with HF|5% HF]] - ''Removing native oxide''
*[[/IMEC|IMEC]] - ''Cleaning before fusion bonding''
*[[/IMEC|IMEC]] - ''Cleaning before fusion bonding''
*[[/Cleaning with Soap Sonic|Soap Sonic]] - ''Cleaning of "dirty" wafers when entering the cleanroom''
*[[/Cleaning with Soap Sonic|Soap Sonic]] - ''Cleaning of "dirty" wafers when entering the cleanroom''

Revision as of 11:12, 11 February 2008

Clean with:

  • RCA - Two step process to remove organics and metals
  • 7-up & Piranha - Removes organics and alkali ions
  • 5% HF - Removing native oxide
  • IMEC - Cleaning before fusion bonding
  • Soap Sonic - Cleaning of "dirty" wafers when entering the cleanroom