Specific Process Knowledge/Etch/Etching of Bulk Glass: Difference between revisions

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 Beskrives en hel process.
+==Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide==
+{| border="2" cellspacing="0" cellpadding="4" align="center"
+!
+! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent))
+! RIE
+! AOE
+|- valign="top"
+|'''General description'''
+|
+*Isotropic etch
+|
+*Anisotropic etch: vertical sidewalls
+|
+*Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch
+|-valign="top"
+|'''Possible masking materials'''
+|
+*Photoresist
+*Silicon nitride
+|
+*Photoresist
+*(Poly)Silicon
+*Aluminium
+*Chromium (ONLY RIE2!)
+*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
+|
+*Photoresist
+*(Poly)Silicon
+*Aluminium
+|- valign="top"
+|'''Etch rate'''
+|
+*~75 nm/min (Thermal oxide) in BHF
+*~90 nm/min (Thermal oxide) in SIO Etch
+|
+*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters.
+|
+*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
+|-valign="top"
+|'''Batch size'''
+|
+*1-25 wafers at a time
+|
+*1 wafer at a time
+|
+*1 wafer at a time
+|-valign="top"
+|'''Size of substrate'''
+|
+*4" wafers
+|
+*4" wafers or smaller pieces
+|
+*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)
+|-valign="top"
+|'''Allowed materials'''
+|
+*Silicon
+*Silicon Oxide
+*Silicon Nitride
+*Silicon Oxynitride
+*Photoresist
+*Blue film
+*Gold (Au) and Nickel (Ni) (but only in BHF2 (KOH)!)
+|
+*Silicon
+*Silicon Oxide
+*Silicon Nitride
+*Silicon Oxynitride
+*Photoresist
+*E-beam resist
+*Aluminium
+*Chromium (ONLY RIE2!)
+*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
+|
+*Silicon
+*Silicon Oxide
+*Silicon Nitride
+*Silicon Oxynitride
+*Photoresist
+*E-beam resist
+*Aluminium
+|-
+|}