Specific Process Knowledge/Characterization: Difference between revisions
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*[[/PL Mapper|Photoluminescence mapping]] | *[[/PL Mapper|Photoluminescence mapping]] | ||
*[[/Sample imaging|Sample imaging]] | *[[/Sample imaging|Sample imaging]] | ||
*[[/Sample preparation|Sample preparation for inspection]] | |||
*[[/Stress measurement|Stress measurement]] | *[[/Stress measurement|Stress measurement]] | ||
*[[/Thickness Measurer|Wafer thickness measurement]] | *[[/Thickness Measurer|Wafer thickness measurement]] | ||
Revision as of 13:22, 16 March 2015
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment