Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
| Line 122: | Line 122: | ||
|- | |- | ||
|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
| | |Not known | ||
|- | |- | ||
|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
| Line 135: | Line 135: | ||
|Etch rate in nLOF resist | |Etch rate in nLOF resist | ||
|1.6µm was removed after 10min | |1.6µm was removed after 10min | ||
|- | |||
|Comment | |||
|After 10min etch the resist was gone and the etch depth as 1.145µm in the oxide | |||
|- | |- | ||
|} | |} | ||